2041
Resistance Values of Aluminum Oxide Film in Situ during Anodization of Aluminum By Fabry-PéRot Interferometry

Wednesday, 4 October 2017: 09:00
Chesapeake I (Gaylord National Resort and Convention Center)
K. Habib (KISR)
A combination of Fabry-Pérot interferometry and the DC electrochemical method have been used for the first time, in situ, to measure the resistance of aluminium oxide films in 2% sulfuric acid solution. Values of the corresponding resistance of the obtained Al2O3 film thickness were determined during anodization of aluminium (Al) in 2% H2SO4. The obtained resistance values were verified by electrochemical impedance spectroscopy (EIS) and holographic interferometry. The corresponding resistance (2.4 x109 Ohms) to the final thickness of the aluminum oxide film was found in an agreement with the resistance value that was measured by holographic interferometry, 2.54x109 Ohms, in 2% H2SO4. On the contrary, the corresponding resistance (2.4 x109 Ohms) to the final thickness of the aluminum oxide film was found twice the value of the resistance that was measured by the electrochemical impedance spectroscopy (EIS), 1.25x109 Ohms, in 2% H2SO4.

Keywords. Aluminium, Thickness of Oxide Film, Fabry-Pérot interferometry, Holographic Interferometry, Electrochemical Impedance Spectroscopy (EIS), Resistance, and Sulfuric Acid.