In this paper we present results of non-contact corona-Kelvin characterization of poling phenomena for ferroelectric Si:HfO2 thin films. Measurements were performed on free dielectric surfaces. The method uses corona charging and Kelvin force probe measurements. Corona charging pulses are analogous to voltage biasing, except that no top electrode is needed. Corona charging enables biasing the Si:HfO2to a near coercive field where onset of poling occurs. Mapping of the surface voltage with a small diameter Kelvin force probe allows to quantify poling phenomena, its uniformity and degradation during repetitive switching (Fig. 1).