New Materials and Devices

Thursday, 5 October 2017: 08:30-12:50
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Susanne Stemmer and Stefan De Gendt
08:30
860
(Invited) 3D Dirac Semimetal Cd3As2 Thin Films
S. Stemmer, T. Schumann, M. Goyal, D. Kealhofer, and O. Shoron (University of California, Santa Barbara)
09:00
861
(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
T. Nabatame (National Institute for Materials Science)
09:30
Break
09:50
862
(Invited) Room Temperature Aging Effect Improvement for Device Stability and Manufacturability of FinFET Technologies
X. He, D. Triyoso, S. Uppal, B. Fu, X. Zhang, S. Yamaguchi, C. Yong, B. Liu, M. Joshi, and S. Samavedam (GLOBALFOUNDRIES)
10:40
864
A Rational Co-Design Approach for Next Generation Dielectric Materials with the Transition Metal Containing Coordination Polymers
S. Nasreen, G. M. Treich, M. L. Baczkowski, A. K. Mannodi-Kanakkithodi, Y. Cao, R. Ramprasad, and G. A. Sotzing (University of Connecticut)
11:20
866
Impact of Alkaline Solutions on Via Resistance Reduction and Critical Dimension (CD) Control for Sub-10 Nm Technology Nodes
K. Ryan (GLOBALFOUNDRIES), B. Peethala (IBM Research), H. You (GLOBALFOUNDRIES), R. Knarr (Lam Research Corporation), F. Mont (GLOBALFOUNDRIES), D. Canaperi (IBM Research), W. Kleemeier, P. Mennell, R. Quon, and S. Siddiqui (GLOBALFOUNDRIES)
11:40
867
Comparison of Low k Dielectric Film Properties Under Ultra Violet Curing Technique
V. Seshachalam, A. R. Parker, and S. Yi (GLOBALFOUNDRIES)
12:00
868
Kelvin Force Probe Microscopy of Ferroelectric Si:HfO2
D. Marinskiy (Semilab SDI), P. Polakowski (Fraunhofer IPMS-CNT), J. Lagowski, M. Wilson, P. Edelman (Semilab SDI), and J. Müller (Fraunhofer Institute for Photonic Microsystems IPMS)
12:40
Concluding Remarks