We have been investigated 2D layered materials for Si technology, but not for the active materials. We have focused 2D layered materials as interface materials due to the chemical inertness and their atomically thin nature. Especially, Graphene has been suggested as a promising material for future interconnects because of its unique electrical and chemical properties. For instance, they are good candidates for diffusion barrier.
Also, they are good candidates for interface materials between metal and Si to reduce the Schottky barrier heights and contact resistance in source and drain, which is one of the most critical issues for scaling down.
In this talk, we will cover and discuss the possibility of Graphene and other 2D layered materials for interconnects and contact resistance reducer in Si technology. In addition, we will also cover other potential applications based on 2D materials’ unique properties, such as, chemical inertness and atomic thick nature.
 L.Li et al., “Verticle and lateral copper transport through graphene layer”, ACS Nano, 9 (8), pp. 8361-8367 (2015)
 K.-E. Byun et al., “Graphene for true ohmic contact at metal-semiconductor junctions”, Nano Letters, 13 (9), pp. 4001-4005 (2013)