Thermal annealing of electrodeposited film is one of the ways to enhance the TE properties7. The effect of annealing has been examined for different types of thermoelectric films fabricated using different deposition techniques7-9. However, a systematic study of annealing parameters on the electrodeposited p-type BiSbTe film is still missing. Thereby, in this work we have investigated the effect of annealing parameters in enhancing the TE properties of electrodeposited p-type BiSbTe films. The influence of thermal annealing on microstructure and TE properties were investigate within a temperature range of 250 - 400 °C in nitrogen atmosphere. Scanning electron microscopy (Figure 1) and x-ray diffraction techniques were used to study the change in microstructure and crystallinity of the films. Seebeck coefficient and electrical conductivity were measured at room temperature. It was observed that increasing the annealing temperature increased the Seebeck coefficient. A maximum Seebeck coefficient of 94 μV/K and a corresponding power factor of 263.72 µW/mK2 was obtained for the p-type BiSbTe film annealed at 350 °C for 1h. We found that the annealing parameters played a vital role in determining the thermoelectric (TE) properties of the film. Further increase in the annealing temperature led to a decrease in the TE properties due to the depletion of tellurium content in the films. The influence of the annealing parameters on the TE properties for the p-type BiSbTe based electrodeposited films were analyzed in detail with a view to fabricate a complete thermoelectric device.
Authors acknowledge financial support from the European Union’s Horizon2020 funded project “Thermally Integrated Smart Photonics Systems (TIPS)”, under the grant agreement No. 644453. This publication has emanated from research supported in part by a research grant from Science Foundation Ireland (SFI) and is co-funded under the European Regional Development Fund under Grant Number 13/RC/2077.
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1. R. Enright, S. Lei, K. Nolan, I. Mathews, A. Shen, G. Levaufre, R. Frizzell, G. H. Duan, and D. Hernon, Bell Labs Technical Journal, 1931-45 (2014).
2. C. O'Dwyer, R. Chen, J.-H. He, J. Lee, and K. M. Razeeb, ECS Journal of Solid State Science and Technology, 6(3), Y3-Y3 (2017).
3. H. Noro, K. Sato, and H. Kagechika, Journal of Applied Physics, 73(3), 1252-1260 (1993).
4. S.-D. Kwon, B.-k. Ju, S.-J. Yoon, and J.-S. Kim, Journal of Electronic Materials, 38(7), 920-924 (2009).
5. B. Gardes, J. Ameziane, G. Brun, J. C. Tedenac, and A. Boyer, Journal of Materials Science, 29(10), 2751-2753 (1994).
6. S. Lal, D. Gautam, and K. M. Razeeb, ECS Journal of Solid State Science and Technology, 6(3), N3017-N3021 (2017).
7. D. M. Lee, C. H. Lim, D. C. Cho, Y. S. Lee, and C. H. Lee, Journal of Electronic Materials, 35(2), 360 (2006).
8. S.-j. Jeon, M. Oh, H. Jeon, S. Hyun, and H.-j. Lee, Microelectronic Engineering, 88(5), 541-544 (2011).
9. B. Fang, Z. Zeng, X. Yan, and Z. Hu, Journal of Materials Science: Materials in Electronics, 24(4), 1105-1111 (2013).