Memory Devices and Materials

Monday, 2 October 2017: 14:00-16:20
Chesapeake D (Gaylord National Resort and Convention Center)
Chairs:
Shadi Dayeh and Michel Houssa
14:00
821
(Invited) Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks
S. Hoffmann-Eifert (PGI and JARA-Fit, Forschungszentrum Jülich GmbH, Germany), H. Zhang (Forschungszentrum Juelich GmbH), A. Hardtdegen (PGI and JARA-Fit, Forschungszentrum Jülich GmbH, Germany), C. Funck (RWTH Aachen University), S. Menzel, V. Rana (Forschungszentrum Juelich GmbH), and D. Wouters (RWTH Aachen University)
14:30
822
Effect of Cu-Doped Switching Layer of Amorphous Carbon-Oxide Based Reram on Non-Volatile Memory Characteristics for Forming-Free Operation
H. J. Kim, M. J. Song, K. H. Kwon, D. W. Kim, S. M. Jin, D. J. Kim, H. M. Yang, and J. G. Park (Hanyang University)
14:50
823
Selection Device with Cu Doped-Chalcogenide Material for 3D Cross-Point Array Structure of 1selector-1resistor Memory Cells
K. H. Kwon, M. J. Song, D. W. Kim, H. J. Kim, S. M. Jin, D. J. Kim, H. M. Yang, and J. G. Park (Hanyang University)
15:10
Break
15:20
824
Viability of Post-Transition Metal As Anode for Nano-Ionic Resistive Switching Based Devices
S. S. Sonde, B. Chakrabarti (IME, The University of Chicago, CNM, Argonne National Laboratory), K. Sasikumar, L. Stan, S. Sankaranarayanan (CNM, Argonne National Laboratory), and S. Guha (IME, The University of Chicago, CNM, Argonne National Laboratory)
 
825
Enhancement of Switching Property of Perpendicular- Magnetic Tunnel Junctions Using Single MgO Based Co2Fe6B2 Double Free Layer Structure (Cancelled)
16:00
826
Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage
C. F. Yang and J. G. Hwu (National Taiwan University)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
See more of: Dielectric Science and Materials
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