Transparent conducting oxide semiconductors have been researched extensively in the past. Majority of that research has been focused primarily on the n-type transparent semiconductors. Studies on p-type transparent semiconductors have been comparatively lesser. In order to advance in the field of transparent p-n junction and other active devices, more and more researches are being done on p-type transparent semiconductors. CuGaO₂ is one of the p-type transparent semiconductor that has the future prospects of being used extensively in the transparent electronics field.

For this work, CuGaO₂ (50:50 of Cu₂O: Ga₂O₃) thin films was RF sputter deposited onto both glass and quartz slides. Optical transmission studies was performed on these thin films to extract the band gap. Subsequently, optical transmission studies were performed on CuGaO₂ thin films which were systematically post-sputtering annealed. The band gap extraction results of these annealed CuGaO₂ thin films are reported.