Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, ferroelectric memristors divices with tunable resistive behavior—have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. In this work, we fabricated the tunable ferroelectric tunnel junction memristor device as future memory device. Ca doped BiFeO₃/BiFeO₃ thin films grown on Nb doped SrTiO₃ substrate (conductive electrode) by pulsed laser deposition are studied by X-ray diffraction and I-V measurement to characterize their structure and memristive properties. These are simultaneously realized that the change of the resistance of the semiconductor substrate due to the remanent polarization of the ferroelectric thin film and the change of the anisotropic resistance due to the distribution of the space charge in the thin film were simultaneously realized. The results indicate that the self-rectifying resistive switching properties, and this device can be applied as memory device integrating the function of a selector in 3D cross point array.