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(Invited) Hot Electron Cooling in a Zener-Klein Graphene on BN Transistor: The Role of Hyperbolic Polaritons

Wednesday, 16 May 2018: 14:40
Room 201 (Washington State Convention Center)
W. Yang, E. Baudin (Ecole Normale Superieure), S. Berthou (Université Paris Diderot, Ecole Normale Supérieure), B. Placais (CNRS, Ecole Normale Superieure), and C. Voisin (Ecole Normale Supérieure)
We investigate energy relaxation in a high-mobility graphene on BN transistors. Above a threshold bias voltage, the transistor is driven in a Zener-Klein tunnelling regime involving the creation of electron-hole pairs. Simultaneously, we record the electron gas temperature by means of high sensitivity GHz noise thermometry. We show that a new -extremely efficient- cooling mechanism sets in at the Zener-Klein bias threshold that we assign to the relaxation of electron-hole pairs to hyperbolic polariton modes sustained by the BN substrate. The most striking consequence is a reversal of the doping dependence of the electronic temperature due to the Pauli blocking of ZK-tunnelling at finite doping. HPP cooling is the most efficient mechanism in graphene and promotes graphene Zener-Klein transistors as a valuable route for RF power amplification.