Properties and Devices 1

Wednesday, 16 May 2018: 14:00-18:00
Room 201 (Washington State Convention Center)
Chair:
Zhihong Chen
14:00
2666
Wafer Scale Two-Dimensional Transition Metal Dichacogenide Materials and Devices
L. Cao (North Carolina State University)
 
877
Photovoltage Optimization of Si Devices with a Fluorinated Graphene Interfacial Layer (Cancelled)
14:20
878
(Invited) Improving Conducting and Insulating Interfaces to 2D Materials
A. D. Franklin (Duke University)
14:40
879
(Invited) Hot Electron Cooling in a Zener-Klein Graphene on BN Transistor: The Role of Hyperbolic Polaritons
W. Yang, E. Baudin (Ecole Normale Superieure), S. Berthou (Université Paris Diderot, Ecole Normale Supérieure), B. Placais (CNRS, Ecole Normale Superieure), and C. Voisin (Ecole Normale Supérieure)
15:00
880
(Invited) Vertical Transport through Multi-Layer Van Der Waals Structures
J. Appenzeller (Electrical and Computer Engineering, Purdue University)
15:20
881
Metal Semiconductor Field Effect Transistors with Conducting NbS2/n-MoS2 Van Der Waals Schottky Junction and Graphene Contact
H. G. Shin, J. Y. Lim, S. Park, and S. Im (Yonsei University)
15:40
Break
16:00
882
Charges, Defects and Interfaces in Two-Dimensional Materials and Devices
Y. Liu (The University of Texas at Austin)
16:20
883
(Invited) Quasi-Two-Dimensional Thermoelectricity in Snse
T. Szkopek, G. Gervais (McGill University), and A. Grueneis (Universität zu Köln)
16:40
884
(Invited) Theory and Device Concepts of Novel Electronic, Optoelectronic, and Topological 2D Materials
X. Qian (Texas A&M University)
17:00
885
Electric Double Layer Doping of WSe2 Field-Effect Transistors Using a Monolayer Electrolyte
J. Liang, K. Xu, and S. Fullerton (University of Pittsburgh)
17:20
886
Simulation and Analysis of Phosphorene Nanoribbon Field Effect Transistors Using Non-Equilibrium Green's Function Formalism
H. Sarvari (University of Kentucky), C. Liu (Eastern Kentucky University), Z. Chen (University of Kentucky), and R. Ghayour (Shiraz University)
17:40
887
Hybrid PN Diode and CMOS Inverters Composed of MoTe2 Nanosheet-Amorphous in-Ga-Zn-O Thin Film
H. S. Lee, H. Kwon, and S. Im (Yonsei University)
See more of: B06: 2D Layered Materials from Fundamental Science to Applications
See more of: Carbon Nanostructures and Devices
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