There is an increased interest in very high dielectric constant (high-k) material studies due to their potential applications in energy storage elements. In this aspect, the perovskite materials seem to achieve very high-k values [1]. In this study, the focus has been to deposit thin films of CaCu₃Ti₄O₁₂. These films are deposited by RF magnetron sputtering process using CaCu₃Ti₄O₁₂ target. The films are deposited in an argon ambient and subsequently annealed in oxygen to investigate the electrical and optical properties. The studies include resistivity, dielectric constant and the band gap of the annealed films. Metal–insulator–metal (MIM) structures have been fabricated using aluminum film as the electrodes to study the electrical properties. The transmission and reflection properties are performed using the UV-Visible spectrophotometer to extract the bandgap of these annealed films.

REFERENCE:

[1] M.A. Subramanian, Dong Li, N. Duan, B.A. Reisner, A.W. Sleight, High Dielectric Constant in ACu₃ Ti₄ O₁₂ and ACu₃ Ti₃ FeO₁₂ Phases