H01 Poster Session

Tuesday, 15 May 2018: 18:00-20:00
Ballroom 6ABC (Washington State Convention Center)
 
1427
Wide Color Gamut Deep-Blue OLED Architecture for Display Application (Cancelled)
 
1428
Solid and Liquid State Fluorescent Sensor Using CdTe Quantum Dots for Mercury Detection (Cancelled)
 
1429
Performance Enhancement of GaN-Based Light-Emitting Diodes with Magnesium Nitride Inter-Layers (Cancelled)
1430
Ultraviolet Sensor Performance of Nanostructured LaCoO3 Prepared by the Solution-Polymerization Method
C. R. Michel (Universidad de Guadalajara CUCEI Departamento de Fisica), M. A. Lopez-Alvarez, and A. H. Martinez-Preciado (Universidad de Guadalajara CUCEI)
1431
AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure
W. T. Lin, W. C. Lin, Y. N. Zhong, and Y. M. Hsin (National Central University)
1432
AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer
H. C. Tsai, S. C. Fan Chiang, Y. N. Zhong, and Y. M. Hsin (National Central University)
1433
Solid-State Diffusional Behaviors of Functional Metal Oxides at Atomic Scale
J. Y. Chen (Dep. Mater. Sci. and Eng., National Chiao Tung University), C. W. Huang (Industrial Technology Research Institute, Taiwan), and W. W. Wu (National Chiao Tung University)
1434
Photoconduction Properties of Crystalline Selenium Based Photodetectors with a Lateral Metal-Insulator-Semiconductor-Insulator-Metal Device Structure
Y. W. Huang, C. Y. Chang, and F. M. Pan (National Chiao Tung University)
1435
Influences of Crystallization of Amorphous Se on Photovoltaic Characteristics of Crystalline Se Based Schottky Junction Solar Cells
Y. J. Lin, C. Y. Chang, and F. M. Pan (National Chiao Tung University)
1436
The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode
M. Na (Korea Electrotechnology Research Institute), J. Keum (Korea Electrotechnology Research Institute, Changwon National University), J. H. Moon, I. H. Kang, and W. Bahng (Korea Electrotechnology Research Institute)
1437
Effect of Phosphor Layer Size on the Optical and Thermal Properties of Chip Scale Packaged Light-Emitting Diodes
G. H. Bak (LG Innotek Co., Ltd, Korea University), S. W. Oh, H. H. Sung, S. B. Yoon, W. J. Kim, H. H. Jeong, J. O. Song (LG Innotek Co., Ltd), and T. Y. Seong (Korea University)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 19
See more of: Electronic and Photonic Devices and Systems
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