Memory Technology and Devices

Tuesday, 15 May 2018: 14:00-16:00
Room 309 (Washington State Convention Center)
Chair:
Jean-Pierre Raskin
14:00
1474
Towards InGaAs MSDRAM Capacitor-Less Cells
C. Navarro, S. Navarro, C. Marquez, C. Sampedro, L. Donetti (University of Granada), S. Karg, H. Riel (IBM Research, Zurich), and F. Gamiz (University of Granada)
14:20
1475
Memory Maps: Reading RRAM Devices without Power Consumption
S. Dueñas, H. Castán (UNIVERSIDAD DE VALLADOLID), K. Kukli (University of Helsinki, University of Tartu), M. Mikkor, K. Kalam, T. Arroval, and A. Tamm (University of Tartu)
14:40
1476
Impact of the Heat Conductivity of the Inert Electrode on ReRAM Performance and Endurance
M. Al-Mamun (Virginia Tech), S. W. King (Intel Corporation), S. Meda (Virginia Tech), and M. K. Orlowski (ECE Department Virginia Tech)
15:00
1477
Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells
A. Makarov, V. Sverdlov, and S. Selberherr (Institute for Microelectronics, TU Wien)
15:20
Break
See more of: H02: Advanced CMOS-Compatible Semiconductor Devices 18
See more of: Electronic and Photonic Devices and Systems
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