Ultra-Wide Bandgap Materials and Devices 2

Tuesday, 15 May 2018: 14:00-17:20
Room 213 (Washington State Convention Center)
Chairs:
Travis J Anderson and Marko J Tadjer
14:00
(Invited) Exploration of Process Techniques for Ga2O3 Based Electronics
F. Ren, S. J. Pearton, J. Yang, P. Carey (University of Florida), S. Ahn (University of Flrida), R. Khanna, K. Bevlin, D. Geerpuram (Plasma-Therm), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
14:30
(Invited) Fabrication and Characterization of β-Ga2O3 Heterojunction Rectifiers
M. J. Tadjer, L. E. Luna (U.S. Naval Research Laboratory), E. Cleveland, K. D. Hobart, and F. J. Kub (Naval Research Laboratory)
15:00
Inductively Coupled Plasma Etching and Electrically Active Damage of Bulk, Single-Crystal Ga2O3
J. Yang, S. Ahn, F. Ren, S. J. Pearton (University of Florida), R. Khanna, K. Bevlin, D. Geerpuram (Plasma-Therm), L. C. Tung, J. Lin, H. Jiang (Texas Tech University), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
15:20
Break
15:40
Interface State Density of Atomic Layer Deposited Al2O3 on β-Ga2O3
C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, and K. Kakushima (Tokyo Institute of Technology)
16:00
Electron and Proton Irradiation Damage in β-Ga2O3 Vertical Rectifiers
J. Yang, Z. Chen, F. Ren, S. J. Pearton (University of Florida), G. Yang, J. Kim (Korea University), J. Lee, E. Flitsiyan, L. Chernyak (University of Central Florida), and A. Kuramata (Tamura Corporation and Novel Crystal Technology)
16:20
Quasi-Two-Dimensional β-Ga2O3 based Hetero-Structure Transistors
J. Kim, S. Kim, and J. Kim (Korea University)
16:40
Strain Engineering and Two-Dimensional Electron Gas in Polar ε-Ga2O3
S. B. Cho and R. Mishra (Washington University in St. Louis)
17:00