Silicon Carbide

Wednesday, 16 May 2018: 09:00-10:50
Room 213 (Washington State Convention Center)
Chair:
Steve H. Kilgore
09:00
1438
(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate
H. W. Kim, O. Seok, J. H. Moon, W. Bahng (Korea Electrotechnology Research Institute), and J. Jo (Ajou University)
09:30
1439
Electrical and Material Properties Analysis of 5kV 4H-SiC Schottky Barrier Diodes
J. Keum (Korea Electrotechnology Research Institute, Changwon National University), M. Na, I. H. Kang, W. Bahng (Korea Electrotechnology Research Institute), and B. Koo (Changwon National University)
09:50
1440
Reliability of SiC Schottky Diodes with Mo2C Electrode
D. Saito, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, and K. Kakushima (Tokyo Institute of Technology)
10:10
1441
Effect of Wafer Orientation on Near-Interface Oxide Traps in 4H-SiC Metal-Oxide-Semiconductor Capacitors
I. U. Jayawardhena, A. Jayawardena, T. Isaacs-smith, and S. Dhar (Auburn University)
10:30
Break
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 19
See more of: Electronic and Photonic Devices and Systems
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