Technologies for Advanced Integrated Circuits

Monday, 14 May 2018: 10:00-12:00
Room 307 (Washington State Convention Center)
Chairs:
Fred Roozeboom and Stefan De Gendt
10:00
(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials
R. J. Carter, R. Sporer, T. J. McArdle, G. R. Mulfinger, J. R. Holt, S. Beasor, A. Child, J. Fronheiser, J. A. Wahl, H. Geisler, G. J. Kluth, D. H. Triyoso, K. Punchihewa, U. Rana, L. Vanamurthy, and D. K. Sohn (GLOBALFOUNDRIES)
10:40
(Invited) Laser Annealing in CMOS Manufacturing
O. Gluschenkov (IBM Research at Albany Nanotech) and H. Jagannathan (IBM Research)
11:20
Stress and Strain Evolution in Stacked Gate-All-Around Transistors for Sub-7nm Node Studied By Advanced Transmission Electron Microscopy Techniques and Finite Element Method Modelling
S. Reboh, R. Coquand (CEA, LETI, Minatec Campus, Université Grenoble Alpes), N. J. Loubet (IBM Research), N. Bernier (CEA, LETI, Minatec Campus, Université Grenoble Alpes), R. Chao (IBM Research), G. Audoit (CEA, LETI, Minatec Campus, Université Grenoble Alpes), J. L. Rouviere (CEA, INAC, Minatec Campus, Université Grenoble Alpes), S. Barraud (CEA, LETI), E. Augendre (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus), J. Li, R. Muthinti, J. Gaudiello (IBM Research), N. Gambacorti (CEA, LETI, Minatec Campus, Université Grenoble Alpes), T. Yamashita (IBM Research), and O. Faynot (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus)
11:40
Pinch-Off Plasma CVD Deposition Process and Material Technology for Nano-Device Air Gap/Spacer Formation
S. V. Nguyen (IBM Research at Albany Nanotech), T. J. Haigh (IBM STR Research), K. Cheng (IBM), C. Penny (IBM Research at Albany Nanotech), C. Park (Global Foundries at Albany Nanotech), J. Li (IBM at Albany Nanotech), S. C. Mehta, T. Yamashita (IBM Research), L. Jiang, and D. Canaperi (IBM Research at Albany Nanotech)