(Invited) Controlled Synthesis and Thermoelectric Properties of Tin Telluride-Based Topological Crystalline Insulator Nanowires

Wednesday, 16 October 2019: 14:00
Room 209 (The Hilton Atlanta)
S. Zhang (Indiana university)
Tin telluride (SnTe) and its related alloys have recently attracted significant interest in the thermoelectric community because of their great potential as environmental-friendly alternatives to the conventional lead telluride-based thermoelectric materials. Meanwhile, they have been demonstrated by condensed matter physicists to be a class of novel quantum materials named topological crystalline insulators (TCI's), which host topological states on their high symmetry crystal surfaces. The SnTe-based TCI's possess intriguing surface properties, including Dirac cones in their electronic band structure and Van-Hove singularities in the density of states. One-dimensional TCI nanowires with large surface-area-to-volume ratios and well-defined facets provide an excellent platform to enhance topological surface contributions to the thermoelectric properties.

In this talk, I will present the controlled growth and thermoelectric studies of SnTe-based TCI nanowires. In particular, I will discuss how we control the facet, diameter, doping, and alloying in the vapor-liquid-solid growth of SnTe nanowires. Measurements of the Seebeck coefficient, and electrical and thermal conductivities were performed on the same single nanowires to accurately determine their thermoelectric figure of merit. I will discuss the enhancement of the Seebeck coefficient and suppression of thermal conductivity in connection with the topological states, doping, alloying, and nano-structuring.