G05 - Resistive Switching in Binary Oxide Systems

Monday, 14 October 2019: 10:00-12:40
Room 210 (The Hilton Atlanta)
Chair:
Stephen S. Nonnenmann
10:00
(Invited) In Situ Filamentary Resistance-Switching Experiments Using Bulk Oxide Single Crystals and Polycrystals
I. W. Chen (U Penn, Dept Materials Science & Engineering) and A. Alvarez (University of Pennsylvania Department of MSE)
10:40
(Invited) Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory
T. H. Park (Seoul National University, Dep. MSE, and Inter-University Semicon. Res. Center) and C. S. Hwang (Dep. MSE, and Inter-University Semicon. Res. Center, Seoul National University)
11:20
Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks
L. Tang (Central South University - Changsha), H. Maruyama (University of Florida), D. Zhang (Central South University - Changsha), and J. C. Nino (University of Florida)
11:40
Memristive Devices Formed By ALD Metal Oxide Growth on a Hafnium Layer – Study of the Interfacial HfO2 Formation
S. Aussen, A. Hardtdegen (PGI and JARA-Fit, Forschungszentrum Jülich GmbH, Germany), R. Dittmann (Peter Gruenberg Institute (PGI-7)), and S. Hoffmann-Eifert (PGI and JARA-Fit, Forschungszentrum Jülich GmbH, Germany)
12:00
Electrical Pulse Driven Insulator-Metal Transition of VO2 Devices As Leaky-Integrate-and-Fire Artificial Neurons
Z. Xu and Z. Fan (Texas Tech University)
12:20
Parasitic Cell-to-Cell Heat Transfer in Reram Arrays and Thermally Induced Memory Cell Performance Degradation
M. Al-Mamun and M. Orlowski (Virginia Tech)
See more of: G05: Oxide Memristors 2
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>