G05 - Electrical and Optical Characterization of Memristors

Monday, 14 October 2019: 14:00-15:40
Room 210 (The Hilton Atlanta)
Chair:
A. Alec Talin
14:00
(Invited) Electron Beam Induced Current Microscopy of Interfacial Barrier Effects in Al2O3/TiOx Resistive Switches
B. D. Hoskins (Alternative Computing Group, NIST)
14:40
Examining Oxygen Exchange Kinetics of Anomalous Resistive Switching By Optical Tracking in Redox Based Memristive Devices
T. Defferriere (Massachusetts Institute of Technology), H. L. Tuller (Kyushu University), J. L. M. Rupp, and D. Kalaev (Massachusetts Institute of Technology)
15:00
Optically Switchable Memristors: A Route to Hierarchical Control in Artificial Intelligent Systems
N. T. Kemp (University of Hull)
15:20
Memristive Behavior in Core-Shell Nanowire Networks for Neuromorphic Architectures
S. E. Vasisth, J. Palenzuela, H. Maruyama, and J. C. Nino (University of Florida)
See more of: G05: Oxide Memristors 2
See more of: Electronic Materials and Processing
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