G01 - Ge, SiGe, or III-V Surface

Monday, 14 October 2019: 14:00-15:40
Room 209 (The Hilton Atlanta)
Chairs:
Anthony J. Muscat and Sangwoo Lim
14:00
Comparison of Inorganic and Organic Acid Etching Processes on Germanium(100)
S. L. Heslop and A. J. Muscat (University of Arizona)
14:20
(Invited) Cleaning and Passivation of SiGe Surfaces Using Tetramethylammonium Sulfide
Z. Zhang and A. J. Muscat (University of Arizona)
15:00
Effect of Crystal Orientation of Ingaas on the Surface Reaction in Acidic Solutions
J. Na and S. Lim (Dept of Chemical and Biomolecular Eng, Yonsei University)
15:20
Use of Quasi in-Situ XPS Measurements to Study He and Ar Plasma Surface Preparation Performance for III-V Materials
N. Coudurier (Université Grenoble Alpes - CEA LETI), F. Boyer (Université Grenoble Alpes - CEA LETI, STMicroelectronics), G. Zucchi (Université Grenoble Alpes - CEA LETI), B. Pelissier (Univ.Grenoble Alpes, LTM, CNRS), and P. Rodriguez (Université Grenoble Alpes - CEA LETI)
See more of: G01: 16th International Symposium on Semiconductor Cleaning Science and Technology (SCST 16)
See more of: Electronic Materials and Processing
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