G03 - Wide-Gap Semiconductor Devices and Processes 1

Tuesday, 15 October 2019: 08:00-09:40
Room 211 (The Hilton Atlanta)
Chairs:
Yu Cao and Cor Claeys
08:00
(Keynote) Nitrogen-Ion Implantation Doping of Ga2O3 and Its Application to Transistors
M. Higashiwaki, M. H. Wong (Nat. Inst. of Info. and Comm. Tech.), K. Goto, H. Murakami, and Y. Kumagai (Tokyo University of Agriculture and Technology)
08:40
(Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications
P. Fay (University of Notre Dame), J. Wang, L. Cao (Univ. of Notre Dame), A. Xie, E. Beam (Qorvo, Inc.), R. McCarthy, R. Reddy, and C. Youtsey (MicroLink Devices, Inc.)
09:10
(Invited) GaN-Based Multiple 2DEG Channel Bridge (Buried Dual Gate) FET Technology for High Power and Linearity
K. Shinohara, C. King, E. Regan, J. Bergman, A. Carter, A. Arias, M. Urteaga, B. Brar (Teledyne Scientific and Imaging), R. Page, R. Chaudhuri, M. Islam, H. G. Xing, and D. Jena (Cornell University)
See more of: G03: Semiconductor Process Integration 11
See more of: Electronic Materials and Processing
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