G03 - Wide-Gap Semiconductor Devices and Processes 2

Tuesday, 15 October 2019: 10:00-12:00
Room 211 (The Hilton Atlanta)
Chairs:
Yu Cao and Keisuke Shinohara
10:00
(Invited) High-Speed and Linear Graded-Channel GaN FETs
J. S. Moon, J. Wong, B. Grabar, M. Antcliffe, P. Chen, A. Corrion, E. Arkun, I. Khalaf, S. Kim (HRL Labs LLC), and P. Fay (University of Notre Dame)
10:30
(Invited) Novel Channel Engineering for High-Performance AlGaN-Based Transistors
S. H. Sohel, T. Razzak, H. Xue, M. W. Rahman (The Ohio State University), A. Xie, E. Beam, Y. Cao (Qorvo, Inc.), K. Hussain, A. Khan (University of South Carolina), W. Lu, and S. Rajan (The Ohio State University)
11:00
(Invited) High-Performance GaN Hbts with Regrown Emitters
L. Zhang, Z. Cheng, Y. Ai, L. Jia, and Y. Zhang (Institute of Semiconductors, Chinese Academy of Sciences)
11:30
(Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device
T. Nabatame (WPI-MANA, National Institute for Materials Science), E. Maeda (Shibaura Institute of Technology), M. Inoue (National Institute for Materials Science), M. Hirose, H. Kiyono (Shibaura Institute of Technology), Y. Irokawa (National Institute for Materials Science), K. Shiozaki (Nagoya University), and Y. Koide (National Institute for Materials Science)
See more of: G03: Semiconductor Process Integration 11
See more of: Electronic Materials and Processing
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