G03 - Thin Film Devices and Processes

Tuesday, 15 October 2019: 13:30-15:40
Room 211 (The Hilton Atlanta)
Chairs:
Junichi Murota and James Sturm
13:30
14:40
Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors Via a Novel Self-Aligned Lithographic Channel Definition
R. R. Chowdhury, M. S. Kabir (Rochester Institute of Technology), R. G. Manley (Corning Research and Development Corporation), and K. D. Hirschman (Rochester Institute of Technology)
15:00
Investigation into Flash Lamp Annealed Polysilicon Self-Aligned Pmos Tfts with Electrostatic Modifications
G. Packard (Rochester Institute of Technology), R. G. Manley (Corning Research and Development Corporation), and K. D. Hirschman (Rochester Institute of Technology)
15:20
Device Structure and Passivation Options for the Integration of Scaled Indium-Gallium-Zinc-Oxide Thin-Film Transistors
M. S. Kabir, R. R. Chowdhury (Rochester Institute of Technology), R. G. Manley (Corning Research and Development Corporation), and K. D. Hirschman (Rochester Institute of Technology)