G06 - High Density Interconnection

Tuesday, 15 October 2019: 16:00-17:40
Room 210 (The Hilton Atlanta)
Chairs:
Muneharu Kondo and Kazuo Kondo
16:00
(Invited) Enabling Fan-out Wafer-Level Package (FOWLP) through Innovative Copper Electrodeposition Processes
B. Buckalew, K. Thorkelsson, J. Oberst, S. Banik, and T. Ponnnuswamy (Lam Research)
16:40
Line Width Effect on Mo/Cu/Mo Lifetime
M. Li, J. Q. Su, and Y. Kuo (Texas A&M University)
17:00
Thermal Annealing and Impurities Incorporation of Electrodeposited Cobalt Thin Film
Y. Hu and Q. Huang (The University of Alabama)
17:20
Conductivity Modification of Reduced Graphene Oxide (rGO)
W. P. Dow (National Chung Hsing University)
See more of: G06: Materials and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and High Density Interconnection PCB 2
See more of: Electronic Materials and Processing
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