G02 - Nano and Flexible Electronics I

van der Straten, Oscar

Monday, 14 October 2019: 11:40-12:40

Room 214 (The Hilton Atlanta)

Chairs:

Oscar van der Straten and Christophe Vallée

11:40

Characteristics of Oxide TFT Using Carbon-Doped Ιn₂O₃ Thin Film Fabricated By Low-Temperature ALD Using Ιn-Etcp and H₂O&O₃

R. Kobayashi (Meiji University), T. Nabatame (National Institute for Materials Science), K. Kurishima (National Institute for Materials Science, JSPS Research Fellow PD), T. Onaya (JSPS Research Fellow), A. Ohi (WPI-MANA, National Institute for Materials Science), N. Ikeda, T. Nagata, K. Tsukagoshi (National Institute for Materials Science), and A. Ogura (Meiji University)

12:00

Piezoelectric Response of ZnO Thin Films Grown By Plasma-Enhanced Atomic Layer Deposition

J. Pilz (Graz University of Technology), T. Abu Ali (Graz University of Technology, JOANNEUM RESEARCH), P. Schäffner, B. Stadlober (JOANNEUM RESEARCH), and A. M. Coclite (Graz University of Technology)

12:20

Hydrogen Barrier Properties of Atomic Layer Deposited Al₂O₃ with Different Oxidants for Ingazno Thin Film Transistor

Y. Lee, T. Nam, S. Seo (Yonsei University), C. H. Lee (Yonsei University, LG Display Co.), J. Y. Yang, D. W. Choi, C. Yoo, H. J. Kim (LG Display Co.), and H. Kim (Yonsei University)

See more of: G02: Atomic Layer Deposition Applications 15
See more of: Electronic Materials and Processing

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