G02 - Area Selective Deposition and Atomic Layer Etching I

Tuesday, 15 October 2019: 09:00-12:40
Room 214 (The Hilton Atlanta)
Chairs:
Andrea Illiberi , Jeffrey W. Elam and Chip Eddy
09:00
(Invited) Expanding the Toolbox of Atomic Scale Processing: From Materials Control to Selective Processing By Plasma ALD
T. Faraz (Eindhoven University of Technology)
09:40
Break
10:00
Area-Selective Deposition By a Combination of Organic Film Passivation and Atomic Layer Deposition
M. Pasquali, I. Zyulkov (KULeuven, imec), S. De Gendt (KU Leuven, imec), and S. Armini (IMEC)
10:20
(Invited) Selective Area Growth of Deactivating Polymers
R. J. Wojtecki (IBM Research - Almaden)
11:00
Area-Selective Atmospheric-Pressure Spatial ALD of SiO2 Using Interleaved Back-Etch Steps Yielding Selectivity > 10 Nanometer
A. Mameli (TNO-Holst Centre), F. Roozeboom (Eindhoven University of Technology, TNO-Holst Centre), and P. Poodt (TNO-Holst Centre)
11:20
(Invited) PEALD and ALE for Area Selective Deposition
C. Vallée (Univ.Grenoble Alpes, LTM, CNRS, University of Tsukuba), M. Bonvalot (Univ. Grenoble Alpes, LTM, CNRS), R. Gassilloud (CEA, LETI), V. Pesce (Univ. Grenoble Alpes, LTM, CNRS), A. Chaker (Univ. Grenoble alpes, LTM, CNRS), S. Belahcen (Univ. Grenoble Alpes, LTM, CNRS), N. Posseme (CEA, LETI), B. Pelissier (Univ.Grenoble Alpes, LTM, CNRS), P. Gonon, and A. Bsiesy (Univ. Grenoble Alpes, LTM, CNRS)
12:00
(Invited) Challenges and Opportunities for Selective Area Processing in High Volume Manufacturing (HVM)
K. Sharma, P. Lemaire, K. Nardi (Lam Research), and D. Hausmann (Lam Research Corporation)
See more of: G02: Atomic Layer Deposition Applications 15
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