G01 - Wet Etching

Pacco, Antoine

Tuesday, 31 May 2022: 14:00-15:20

West Meeting Room 113 (Vancouver Convention Center)

Chairs:

Antoine Pacco and Sangwoo Lim

14:00

1259

Understanding of Etching Mechanism of Si₃N₄ Film in H₃PO₄ Solution for the Fabrication of 3D NAND Devices

T. Park (Yonsei university), C. Son (Yonsei University), T. Kim (Yonsei university), and S. Lim (Yonsei University)

14:20

1260

Si₃N₄ Etching in Carboxylic-Acid-Containing Superheated Water

C. Son (Yonsei University), T. Park, T. Kim (Yonsei university), and S. Lim (Yonsei University)

14:40

1261

A Novel Method for Molybdenum Etching Using a Combination of Surface Oxidation By Ozone-Gas-Bake and Wet Selective Removal for Future Semiconductor Devices

T. Nakano (SCREE SPE Germany GmbH), A. Pacco (imec), S. Iwahata (SCREEN SPE Germany GmbH), E. Altamirano (imec), and A. Iwasaki (SCREEN Semiconductor Solutions Co., Ltd.)

15:00

1262

Wet Chemical Recess Etching of Ge₂Sb₂Te₅ for 3D Phase Change Memory

A. Pacco, J. G. Lai, P. Puttarame Gowda, H. De Coster, J. Rip, H. Hody, K. Wostyn, and E. A. Sanchez (imec)

See more of: G01: 17th International Symposium on Semiconductor Cleaning Science and Technology (SCST 17)
See more of: Electronic Materials and Processing

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