D01 - 2D Materials and Memory Devices

Sunday, 29 May 2022: 14:00-17:30
West Meeting Room 116 (Vancouver Convention Center)
Chairs:
Peter Mascher and Gregory Lopinski
14:00
1026
Electrochemical Detection of Peroxynitrite Using Selenium-Decorated Graphene
H. Kalil (Cleveland State University, Suez Canal University), M. A. Ibrahim, W. Curtis, and M. Bayachou (Cleveland State University)
14:20
1027
(Invited) Metrology of Solution Processable 2D Materials for Electronic Applications
G. Lopinski (National Research Council Canada)
15:00
1028
Evolution of Nb-Ta Anodic Memristors Identified By Combinatorial Screening
I. Zrinski, A. I. Mardare, A. W. Hassel, A. Minenkov (Johannes Kepler University Linz), and C. Cancellieri (Swiss Federal Laboratories for Materials Science and Technologies)
15:20
1029
Fluoropolymer Passivation Enhanced Switching Endurance of MoS2 Memristors
Y. W. Song, M. K. Song, Y. Jeong Hyun, D. Choi, and J. Y. Kwon (Yonsei University)
15:40
Break
16:00
1030
(Invited, Digital Presentation) Nanostructured Perovskite Resistive RAM for Next Generation Data Storage
S. Poddar, Y. Zhang, and Z. Fan (The Hong Kong University of Science and Technology)
16:40
1031
(Digital Presentation) Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells
M. T. B. Kashem, J. Scoggin, H. Silva, and A. Gokirmak (University of Connecticut)
17:00
1032
(Digital Presentation) Electrothermal Modeling of Interfacial Phase Change Memory
M. T. B. Kashem, J. Scoggin, A. Gokirmak, and H. Silva (University of Connecticut)
17:20
Concluding Remarks
See more of: D01: Solid State Devices, Materials and Sensors: In Memory of Dolf Landheer
See more of: Dielectric Science and Materials
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