G02 - Advanced Semiconductor Materials, Devices and Processing 1

Tuesday, 31 May 2022: 08:00-10:00
West Meeting Room 115 (Vancouver Convention Center)
Chairs:
Hemanth Jagannathan and Stefan De Gendt
08:00
Welcoming Remarks
08:20
1267
(Invited) Semiconductor Technology Challenges, Past, Present and Future
A. Sekiguchi (Tokyo Electron Limited)
09:00
1268
(Digital Presentation) An Advanced Process Control Scheme for Fin Etching Process in Front-End-of-Line Finfet High Volume Production
J. Song, X. Ke (Semiconductor Manufacturing International Corporation), E. N. Zhang (Semiconductor Manufacturing International Corp.), S. Ji, Z. Zhao, C. Zheng, Z. Li (Semiconductor Manufacturing International Corporation), and H. Y. Zhang (Semiconductor Manufacturing International (Shanghai) Corporation)
09:20
1269
Dopant Activation Depth Profiling for Highly Doped Si:P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)
U. Celano (Faculty of Science and Technology, University of Twente., IMEC, Kapeldreef 75, 3001, Leuven, Belgium), L. Wouters, A. Franquet, V. Spampinato, P. van der Heide, M. Schaekers (IMEC, Kapeldreef 75, 3001, Leuven, Belgium), A. Joshi, and B. M. Basol (Active Layer Parametrics (ALP), Scotts Valley, California, USA)
09:40
1270
(Digital Presentation) Advanced Process Control of Dual Patterns for FinFET Mass Production
X. Ke, F. Li, Z. Zhao, S. Ji, X. Xiao, Z. Li, C. Jiang, and H. Zhang (Semiconductor Manufacturing International Corporation)
See more of: G02: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 12
See more of: Electronic Materials and Processing
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