G02 - Post Si CMOS Materials, Devices and Integration

Misra, Durga

Tuesday, 31 May 2022: 14:00-18:00

West Meeting Room 115 (Vancouver Convention Center)

Chairs:

Durga Misra and Paul Timans

14:00

1277

(Invited) Direct Band Gap Emission from Hexagonal Si-Ge

E. Bakkers (TU Eindhoven)

14:40

1278

Impact of the Liquid/Solid Interface on the Strain State of Si_1-XGe_x Layers Processed By Nanosecond Laser Annealing

R. Demoulin (LAAS-CNRS, Université de Toulouse, 31400 Toulouse, France), R. Daubriac (LAAS-CNRS), S. Kerdiles (Université Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), P. Acosta Alba, J. M. Hartmann (CEA-Leti), F. Chiodi (C2N-CNRS), E. Scheid (LAAS-CNRS, Université de Toulouse, 31400 Toulouse, France), A. La Magna (CNR-IMM, 95100, Catania, Italy), and F. Cristiano (LAAS-CNRS)

15:00

1279

Impact of Nanosecond Laser Annealing on the Electrical Properties of Highly Boron-Doped Ultrathin Strained Si_0.7Ge_0.3 Layers

R. Daubriac, R. Demoulin (LAAS-CNRS, Université de Toulouse, 31400 Toulouse, France), S. Kerdiles (Université Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), P. Acosta Alba, J. M. Hartmann (Université Grenoble Alpes, CEA, LETI), J. P. Barnes (Université Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), P. Michałowski (Łukasiewicz Research Network, IMIF, 02-668 Warsaw, Poland), F. Chiodi (C2N-CNRS, Université Paris Saclay, 91120 Palaiseau, France), E. Talbot (Université Rouen, GPM, 76800 Saint Etienne du Rouvray, France), E. Scheid (LAAS-CNRS, Université de Toulouse, 31400 Toulouse, France), A. La Magna (CNR-IMM, 95100, Catania, Italy), and F. Cristiano (LAAS-CNRS, Université de Toulouse, 31400 Toulouse, France)

15:20

1280

Microstructure Evolution of Nanosecond Laser Annealed Si/Si_1-XGe_x/Si Structures

M. M. B. Auricchio, S. Reboh, P. Acosta Alba (University Grenoble Alpes and CEA-LETI, Grenoble, France), J. M. Hartmann (Université Grenoble Alpes, CEA, LETI), J. Richy, R. Coquand (CEA-LETI, Grenoble, France), and P. Gergaud (University Grenoble Alpes and CEA-LETI, Grenoble, France)

15:40

1281

SiGe Epitaxial Growth on Si Substrate Using Al-Ge Paste

S. Suzuki (Toyo Aluminium K.K., Nara Institute of Science and Technology), M. Matsubara, H. Minamiyama (Toyo Aluminium K.K.), M. Dhamrin (Toyo Aluminium K.K., Osaka university), and Y. Uraoka (Nara Institute of Science and Technology)

16:00

Break

16:20

1282

Transparent Conductive Oxide (TCO) Gated Ingaas Mosfets for Front-Side Illuminated Short-Wave Infrared Detection

T. Maeda, K. Oishi (AIST, Tokyo University of Science), H. Ishii, W. H. Chang, T. Shimizu, T. Shimizu (AIST), A. Endoh, H. Fujishiro (Tokyo University of Science), and T. Koida (AIST)

16:40

1283

Crystallization of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing

R. H. Saputro (National Institute for Materials Science, University of Tsukuba), R. Matsumura (National Institute for Materials Science), and N. Fukata (National Institute for Materials Science, University of Tsukuba)

17:00

1284

(Digital Presentation) Diffusion and Segregation in Highly Stacked Ge_0.9Sn_0.1/Ge:B and Ge_0.95Si_0.05/Ge:P Epilayers

W. H. Hsieh, Y. C. Liu, C. E. Tsai, and C. Liu (National Taiwan University)

17:20

1285

(Invited) Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs

Y. Junk, M. Liu (Forschungszentrum Jülich), M. Frauenrath (Université Grenoble Alpes, CEA, LETI), J. M. Hartmann (University Grenoble Alpes and CEA-LETI, Grenoble, France), D. Gruetzmacher (Forschungszentrum Jülich), D. Buca (PGI-9, Forschungszentrum Juelich), and Q. T. Zhao (Forschungszentrum Jülich)

17:40

Concluding Remarks

See more of: G02: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 12
See more of: Electronic Materials and Processing

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