D01 - Two-Dimensional Materials and Processing

Kakushima, Kuniyuki

Tuesday, 11 October 2022: 14:00-17:15

Room 310 (The Hilton Atlanta)

Chairs:

Kuniyuki Kakushima and Pierre Morin

14:00

(Invited) Addressing Key Process and Material Challenges to Enable 2D Transition Metal Dichalcogenide Channels in Advanced Logic Devices

P. Morin (imec), B. Groven, H. Medina, Y. Shi (IMEC), V. Voronenkov (imec), I. Kandybka (KULeuven, IMEC), A. Delabie (University of Leuven), D. Vranckx (imec), B. De Vos, S. Nijs, T. Maurice, D. Cott (IMEC), S. Banerjee, Q. Smets, T. Schram, X. Wu, D. Lin (imec), and I. Asselberghs (IMEC)

14:40

(Invited) Super-Nernstian Isfet Combining Two-Dimensional WSe₂/MoS₂ Heterostructure with Negative Capacitance

S. Sanjay (Indian Institute of Science Bangalore), F. I. Sakib, M. Hossain (University of Dhaka), and N. Bhat (Indian Institute of Science Bangalore)

15:20

Break

15:30

(Invited) Epitaxial Growth of Transition Metal Dichalcogenide Monolayers for Large Area Device Applications

J. M. Redwing (The Pennsylvania State University)

16:10

(Invited) Low Voltage Operation of CMOS Inverter Based on WSe₂ n/p FETs

T. Kawanago, T. Matsuzaki, R. Kajikawa, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, and H. Wakabayashi (Tokyo Institute of Technology)

16:50

Scalable Growth of Transition Metal Dichalcogenides for Next-Generation Nanoelectronics

S. W. Tong (Institute of Materials Research and Engineering, A*STAR) and M. F. Ng (Institute of High Performance Computing, A*STAR)

17:10

Concluding Remarks

See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 19
See more of: Dielectric Science and Materials

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