H02 - Oxide, 2D, SiGe, 2D, poly-Si, and a-Si:H TFTs

Monday, 10 October 2022: 14:00-15:50
Room 214 (The Hilton Atlanta)
Chairs:
Andrew John Flewitt and Sung Haeng Cho
14:00
(Invited) Oxide Tfts Based on Semiconductors and Semimetals
A. Song (University of Manchester, Shandong University)
14:30
(Invited) Evaluation of Polycrystalline-Si1-XGex Thin-Film Transistors Grown Laterally on a Glass Substrate Using a Continuous-Wave Laser
A. Hara, T. Sagawa, K. Kusunoki (Tohoku Gakuin University), and K. Kitahara (Shimane University)
15:00
Influence of Molecular Adsorption on MoS2 Memtransistor Switching Kinetics
J. M. Cain, C. M. Smyth (Sandia National Laboratories), X. Yan, S. E. Liu, V. K. Sangwan, M. C. Hersam (Northwestern University), S. S. Chou, and T. M. Lu (Sandia National Laboratories)
15:20
(Invited) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors
M. Furuta (Kochi University of Technology) and Y. Magari (Shimane University)
See more of: H02: Thin Film Transistors 16 (TFT 16)
See more of: Electronic and Photonic Devices and Systems
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