Graphene^[1], an atom-thin sheet of carbon discovered in 2004, has created a brand new era in two-dimensional (2D) materials owing to its immense potential in both basic and applied research. In recent years, numerous new 2D nanomaterials possessing atomically thin structures have been investigated.^[2] Metal-organic Framework (MOF) nanosheets, as a new category of 2D materials, exhibit diverse structural and physicochemical properties as a result of the self-assembly of metal ions or clusters and polydentate bridging ligands.^[3] Arising from their unique structural features combining MOF and 2D nano-structures, MOF nanosheets exhibit unprecedented physical, electronic, chemical, and optical properties and offer implementation in application field.

Resistive random-access memory is a predominant candidate for future non-volatile memories. It relies on the formation/annihilation of highly conductive paths, leading to the creation of two stable and reversible resistive states.^[4] To achieve the desirable memory characteristics, new materials and a better understanding of the physics triggering the resistive switching (RS) in this system are required. MOF nanosheets with ultrathin nanostructures, high-density active sites and rapid ion/electron transport can offer best opportunities for fundamental and technological research in the RS applications. However, the progress in fundamental understanding has been hampered by the extremely small sizes (of the region) involved in the RS transition region presenting a severe challenge for its physical characterization using conventional metrology methods.

PeakForce tunneling (PFTUNA) atomic force microscopy^[5] provides direct, precise force which makes it shows high spatial resolution and routine high current sensitivity. Therefore, the MOF nanosheets combined with PFTUNA technology can present the best tradeoff between existing process technology and RS performances. In this work, we intend to synthesize Ag-S nanosheets with distorted hexagonal topology (Figure 1a-b). By mean of PFTUNA technology of AFM, MOF nanosheet based memory device is constructed and characterized (Figure 1c). A conductive probe to apply a voltage to the top electrode of the single device thereby setting the memory device into its state ON, i.e., its low-resistive state (LRS), or OFF state, i.e., its high-resistive state (HRS) (Figure 1d).