Laser Crystallizations using Blue Laser-Diodes Annealing (BLDA) as well as conventional Excimer Laser Annealing (ELA) are discussed for mounting the TFTs on flexible panels.

On glass, high crystallinity of Si films can be obtained by using multi-shots ELA as well as CW laser scanning [1, 2]. There are some issues for Si film after ELA, such as rough Si surface or shots MURA including the fabrication cost. As a result of scanning BLDA for thin Si films, remarkable crystallization occurs with keeping the surface smooth not only for CVD film but also for sputtered Si film [3]. By changing the laser power of 445 nm beam, the grain size can be controlled from micro-grains to large grains as well as to anisotropic long crystal grains [4]. For the Si films of heavily phosphorus doped condition, the resistivity decreased drastically due to the increase in the carrier mobility with high carrier concentration after BLDA of single beam scanning as well as after multi-shots ELA [5].

To realize high performance poly Si films directly not only on flexible glass [6] but also on flexible plastic sheet, effective laser annealing for high quality Si film by low temperature deposition is expected and a design for the thermal buffer layers on flexible sheet is effective [7]. To perform ultra-low temperature TFT process, metal source/drain structure without using ion implantation is also proposed.

High performance poly Si TFTs with low fabrication cost on flexible panel should be possible not only for n-channel but also for p-channel [8, 9].

References

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