Poly-Si TFTs

Monday, 1 October 2018: 07:50-11:50
Universal 6 (Expo Center)
Chairs:
Yue Kuo , Michael Shur and Junghwan Kim
07:50
Introductory Remarks
08:00
(Invited) Thin Film Transistor Technologies: Implementing Research Results in Higher Education to Prepare the Emerging Multidisciplinary Connected Objects
O. Bonnaud (University of Rennes 1 and GIP-CNFM), A. Bsiesy Sr. (Centre Nationale de la Recherche Scientifique, LTM, CIME Nanotech - Grenoble INP), and L. Pichon (Universite of Rennes1, France)
08:30
(Invited) Technology Trend of Poly-Si TFT from Viewpoints of Crystallization and Device Performance
N. Matsuo, A. Heya (University of Hyogo), and H. Hamada (Kinki University)
09:30
Break
10:00
(Invited) Advanced Crystallization Using Blue Laser-Diode Annealing for Low Temperature Poly Si TFTs
T. Noguchi (Faculty of Engineering, University of the Ryukyus) and T. Okada (University of the Ryukyus)
11:00
(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization
A. C. Salaun (Universite of Rennes1, France), B. Le Borgne (Univ Rennes1, France), and L. Pichon (Universite of Rennes1, France)
11:30
Integration Challenges of Flash Lamp Annealed LTPS for High Performance CMOS TFTs
G. Packard, A. Rosenfeld, P. Bischoff, K. Bhadrachalam, V. Garg (Rochester Institute of Technology), R. G. Manley (Corning Research and Development Corporation), and K. D. Hirschman (Rochester Institute of Technology)