In this work, Ga₂O₃ single layer serving as the resistive switching layer of a conductive bridge RAM device using a Cu-based supply layer was reported. Gallium oxide is a wide bandgap semiconductor with high dielectric constant and high breakdown voltages. By applying a Ga₂O₃ layer as the resistive switching layer, the excellent memory performances, such as low operation current (down to 100μA), notably high on/off resistance ratio (more than 10⁵), and high switching endurance (>10³ cycles) have been demonstrated in this study. Meanwhile, good stable retention property is also achieved (five decades of window margin are constantly maintained beyond 10⁴ s at 85 ◦C). The novel Ga₂O₃-based CBRAM is a promising technology for potential future high density nonvolatile memory applications.