D04 Poster Session

Wednesday, 3 October 2018: 18:00-20:00
Universal Ballroom (Expo Center)
Chairs:
Shoso Shingubara and Kiyoteru Kobayashi
743
Resistance Switching Properties of Silicon Nitride Material with Heavily Doped Si As Bottom Electrode
P. Karakolis (NCSR "Demokritos", University of Patras), A. Speliotis (NCSR "Demokritos"), V. Ioannou-Sougleridis (NSCR Demokritos), P. Normand (NCSR "Demokritos"), D. Skarlatos (University of Patras), and P. Dimitrakis (NCSR "Demokritos")
744
Investigation on Amorphous Ga2O3 Based Conductive-Bridge Resistive Switching Memory with Low-Power, High-Speed, High Reliability
K. J. Gan, P. T. Liu, T. C. Chien (National Chiao Tung University), Z. H. Li (Department of Photonics, National Chiao Tung University), Y. C. Chiu, D. B. Ruan, and S. M. Sze (National Chiao Tung University)
745
Voltage Pulse Induced Resistance Change Response of Reram with HfO2 Dielectric layer
A. Azuma, H. Yoshida (Kansai University), R. Nakajima (Kansai university), T. Shimizu, T. Ito, and S. Shingubara (Kansai University)
746
Experimental Extraction of the Charge Centroid of Holes Trapped in Metal–Oxide–Nitride–Oxide–Semiconductor Memories
H. Mino and K. Kobayashi (Tokai University)
See more of: D04: Nonvolatile Memories 6
See more of: Dielectric Science and Materials
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