760
(Invited) Interface Engineering of Silicon-Based Molecular Devices

Sunday, 30 September 2018: 15:40
Universal 12 (Expo Center)
C. A. Hacker, R. C. Bruce (National Institute of Standards and Technology), and S. Takeuchi (Theiss Research)
Incorporation of novel materials, such as molecular layers or 2D layers, into electronic paradigms enables transformative potential in applications ranging from memory, batteries, catalysts, flexible devices, and alternate computing paradigms. In order to take advantage of the promising properties of these components, holistic study of the fundamental components as well as their impact on the final device properties are important. As interfaces continue to dominate the electrical performance, the ability to adjust the interface for desired properties becomes more critical. Molecular layers offer a versatile means of tuning interfacial electronic, chemical, physical, and magnetic properties.

This talk will focus on our work with engineering silicon interfaces and the impact that molecules have on the electrical properties. We will describe the impact surface functionalization conditions have on the resulting electrical properties where the monoloayers are characterized by using vibrational spectroscopy, photoelectron spectroscopy, contact angle, and e-GaIn based electrical measurements.