While developers are making headway with GaN power devices and applications, the existing wafer sizes, yields, cost and performance scaling for both GaN switches and diodes have been limited for volume manufacturing ― creating obstacles for widespread GaN adoption with competitive cost structure thereby preventing access to much larger addressable markets. As the result of significant R&D and pilot-line validation, QROMIS’ groundbreaking and disruptive solution to high volume, low cost and scalable GaN manufacturing is a specially-designed CMOS fab-friendly substrate material called “QST^®” (QROMIS Substrate Technology) which supports high quality GaN epitaxy layers (from a few microns to tens of microns thick, including enablement of free-standing GaN) and high performance power device designs thereby paving the way to create a robust GaN power business with large products portfolio (100V to 1,500V lateral or vertical switches, diodes, ICs and more), all manufactured on the same 8-inch or 12-inch production platform. In addition, QST^® enables advanced GaN LED devices (e.g. wafer-level chip-scale package (WLCSP) emitters and micro-LEDs) and GaN RF electronics (e.g. vertical devices) which are key features for high volume manufacturing and foundry economics. In this talk, status updates on QST^®-based materials and device technologies, and the products development work, covering 8-inch diameter 100V-to-1,500V GaN power switches and diodes, GaN LEDs, and GaN RF devices, will be presented. Also, a detailed review of the company’s volume manufacturing status and 8-inch GaN device wafer foundry services for the industry players, in partnership with Vanguard International Semiconductor and Micron Technology, will be discussed.