Wide Bandgap Materials

Monday, 1 October 2018: 13:30-16:00
Universal 24 (Expo Center)
Chairs:
Travis J. Anderson and Lunet E Luna
13:30
1159
(Invited) High Performance & Scalable GaN Device Manufacturing Status on 8-Inch Diameter QST® Platform
C. Basceri (QROMIS, Inc.)
14:00
1160
(Invited) Integration of Diamond with GaN for Thermal Management in High Power Applications
M. S. Goorsky (University of California Los Angeles), Y. S. Wang (University of California, Los Angeles), T. Bai (UCLA), T. I. Feygelson, M. J. Tadjer (U.S. Naval Research Laboratory), K. D. Hobart (Naval Research Laboratory), and S. Graham (Georgia Institute of Technology)
14:30
Break
15:00
1161
(Invited) III-Nitride UV-Visible Integrated Photonics for Quantum and Biomedical Applications
Y. Zhao (Arizona State University)
15:30
1162
(Invited) Understanding Interfaces in Homoepitaxial GaN Growth
J. K. Hite, M. A. Mastro, L. E. Luna, and T. J. Anderson (U.S. Naval Research Laboratory)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 61 (SOTAPOCS 61)
See more of: Electronic and Photonic Devices and Systems
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