Full performance of GaN power devices is not attained yet due to their self-heating. Towards solving this issue Silicon Carbide is a common substrate for growth of GaN and AlGaN epitaxial layers. In spite of the superior thermal conductivity of SiC compared to e.g. Sapphire or Silicon, thermal management of GaN based devices is still a challenge.

This talk will review recent research appraising the benefits of graphene integration with III-N for high power electronics. The merits of graphene as a 2D carbon made material are well demonstrated. We will present, from a material perspective, the recent progresses in the growth of high quality GaN layers on graphene templates. The latter are obtained via sublimation epitaxy on SiC and this process and the graphene quality will be also discussed in the view of template design and its role in the subsequent CaN and AlN deposition. Furthermore, the possibility and the advantage of templated growth of novel 2D Nitrides will be discussed, both from experimental and theoretical point of view of their formation mechanism.

In order to gain full understanding of the new structure formation results from HRTEM and STEM characterization will be shown.

Finally, strategies to use graphene for thermal management in high-power AlGaN/GaN transistors will be discussed.

References

1. A. Kovacs et al. Graphoepitaxy of highquality GaN layers on graphene/6H-SiC, Adv. Mater. Interfaces 2, 1400230 (2015).
2. F. Giannazzo et al. Phys. Status Solidi A 214, No. 4 (2017)