General

Tuesday, 2 October 2018: 08:00-12:20
Universal 5 (Expo Center)
Chairs:
Michael Dudley and Balaji Raghothamachar
08:00
1276
(Invited) Wide-Bandgap Semiconductor Based Power Electronic Devices for Energy Efficiency
E. P. Carlson (Booz Allen Hamilton), D. W. Cunningham, and I. C. Kizilyalli (Advanced Research Projects Agency-Energy)
08:40
1277
(Invited) GaN, SiC Power Devices are Competing with Si Insulated Gate Bipolar Transistors
M. Shur (Rensselaer Polytechnic Institute)
09:20
1278
(Invited) Packaging Material Technology for Wide Band Gap Power Devices and Its Performance/Reliability Evaluation
K. Suganuma, N. Sato, A. Suetake, C. Choe, T. Sugahara, S. Nagao, and C. Chen (Osaka University)
10:00
Break
10:20
1279
(Invited) Materials Properties and Their Impact on Beta Gallium Oxide for High Power Electronics Applications
M. S. Goorsky (University of California Los Angeles), M. Liao, C. Li (University of California, Los Angeles), and K. D. Hobart (Naval Research Laboratory)
11:00
1280
(Invited) Power Electronic Devices Based on Al-Rich Aluminum Gallium Nitride
A. G. Baca, A. M. Armstrong, B. Klein, E. A. Douglas, A. A. Allerman, A. Colon, C. A. Stephenson, and R. J. Kaplar (Sandia National Laboratories)
11:40
1281
(Invited) Interfacing Graphene with III-Nitrides for Power Device Applications
R. Yakimova (Linkoping University, Linkoping, Sweden), A. Kovacs (Ernst Ruska-Centrum, Jülich, Germany), A. Kakanakova (Linkoping University, LInkoping, Sweden), F. Giannazzo (CNR-IMM, Catania, Italy), and B. Pecz (Centre for Energy Research, HAS, Budapest, Hungary)
See more of: H05: Gallium Nitride and Silicon Carbide Power Technologies 8
See more of: Electronic and Photonic Devices and Systems
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