798
(Invited) Self-Terminated Electrodeposition Reactions

Monday, 1 October 2018: 10:40
Universal 8 (Expo Center)
T. P. Moffat (NIST), Y. Liu (Lam Research Corporation), S. H. Ahn (Chung-Ang University), N. L. Ritzert (Theiss Research/NIST), R. Wang (NIST), E. Gillette (University of Maryland), D. Gokcen (National Institute of Standards and Technology), H. Tan (NIST, Gaithersburg, MD, USA), C. Hangarter (U.S. Naval Research Laboratory), L. Bendersky (NIST), U. Bertocci (National Institute of Standards and Technology), and H. You (Argonne National Laboratory)
Recently, an inexpensive “wet form” of ALD based on self-terminated electrodeposition reactions was uncovered that enables controlled formation of ultrathin films of Pt, Ir and iron group metals and alloys thereof. Common to all these systems is the role of reaction intermediates, namely adsorbed H or OH-, in the quenching of metal deposition reactions. Further details on the mechanisms of self-terminated deposition reactions will be discussed. Likewise, the utility and relevance of the process to the synthesis of nanoparticles and thin films, and the study of bimetallic electrocatalysts will be detailed.