Y. Cai, Z. Wang (Beijing Jiaotong University), X. Chen (School of Science,Minzu University of China), C. Li (Minzu University fo China), S. Feng, and Y. Wang (School of Science,Minzu University of China)

Z. Li (Dept. of Electro-Optics and Photonics, Univ. of Dayton), J. Mathews (Physics Dept., University of Dayton), Y. Zhao (Dept. of Electro-Optics and Photonics, Univ. of Dayton), J. D. Gallagher (Department of Physics, Arizona State Univ.), D. Lombardo (Dept. of Electro-Optics and Photonics, Univ. of Dayton), I. Agha (Dept. of Physics, Univ. of Dayton), J. Kouvetakis (School of Molecular Science, Arizona State Univ.), and J. Menendez (Dept. of Physics, Arizona State Univ.)

S. Feng (School of Science,Minzu University of China), X. Chen (Minzu University of China), C. Li (Institute of Semiconductors, Chinese Academy of Sciences), and Y. Wang (School of Science,Minzu University of China)

Y. Li (Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences), M. Wang (Institute of Semiconductors, Chinese Academy of Sciences), X. Fang (Peking University), P. Wang (Institute of Semiconductors, Chinese Academy of Sciences), H. Wang (California Institute of Technology), Z. Li (Institute of Semiconductors, Chinese Academy of Sciences), X. Zhou (Institute of Semiconductors), H. Yu (Institute of Semiconductors, Chinese Academy of Sciences), W. Chen (Peking University), and J. Pan (Institute of Semiconductors)

P. Wang, Z. Li, H. Yu (Institute of Semiconductors, Chinese Academy of Sciences), Y. Li (University of Chinese Academy of Sciences), Q. Tang, W. Zhao (Institute of Semiconductors, Chinese Academy of Sciences), X. Zhou (Institute of Semiconductors), W. Chen (Peking University), Y. Zhang (Institute of Semiconductors, Chinese Academy of Sciences), and J. Pan (Institute of Semiconductors)

C. P. Goyal (GSST, Shizuoka University, Hamamatsu, Japan, SRM University, Chennai, India), M. Omprakash, K. Mutoh (RIE, Shizuoka University, Hamamatsu, Japan), S. Nishino (Toyota Technological Institute, Nagoya, Japan), T. Matsuki (Waseda University, Shinjuku, Tokyo, Japan, AIST, Tsukuba, Ibaraki, Japan), M. Navaneethan (SRM University, Chennai, T.N., India), T. Watanabe (Waseda University, Shinjuku, Tokyo, Japan), Y. Shimura (GSST, Shizuoka University, Hamamatsu, Japan, RIE, Shizuoka University, Hamamatsu, Japan), T. Takeuchi (Toyota Technological Institute, Nagoya, Japan), S. Ponnusamy (SRM University, Chennai, T.N., India), Y. Hayakawa, and H. Ikeda (GSST, Shizuoka University, Hamamatsu, Japan, RIE, Shizuoka University, Hamamatsu, Japan)

H. Zhang, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki (Nagoya University)

Y. Zuo, T. Liu, L. Zhou, J. Zheng (Institute of Semiconductors, Chinese Academy of Sciences), C. Li (School of Science, Minzu University of China), B. Cheng, and Q. Wang (Institute of Semiconductors, Chinese Academy of Sciences)

K. Zagarzusem, M. Zumuukhorol, and C. J. Choi (Chonbuk National University)