Advanced Si and Ge CMOS

Wednesday, 3 October 2018: 10:00-12:30
Universal 24 (Expo Center)
Chairs:
Koji Sueoka and Eddy Roger Simoen
10:00
1175
(Invited) SOI Wafer Technology for Advanced Mos Applications
O. Kononchuk (SOITEC), D. Landru (SOITEC, Parc Techno des Fontaines F-38190 Bernin, France), D. Massy, N. Ben Mohamed (SOITEC), Y. Kim (SOITEC, Parc Techno des Fontaines F-38190 Bernin, France), P. Acosta-Alba (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), and F. Rieutord (CEA-INAC)
10:30
1176
(Invited) Next Generation CMOS Devices: Transistor Module Challenges and Opportunities
B. P. Colombeau (Applied Materials)
11:00
1177
(Invited) Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography
V. Boureau (CEA-LETI), D. Benoit (STMicroelectronics Crolles), and A. Claverie (CEMES-CNRS)
11:30
1178
(Invited) Appearance of High Mobility Carriers in Strained Epitaxial Germanium
M. Myronov (The University of Warwick)
12:00
1179
(Invited) Issues with n-type Dopants in Germanium
D. Skarlatos (University of Patras), V. Ioannou-Sougleridis (NSCR Demokritos), M. Barozzi, G. Pepponi (CMM-MNF, Fondazione Bruno Kessler), N. Z. Vouroutzis (Aristotle University of Thessaloniki), D. Velessiotis (NCSR Demokritos), J. Stoemenos (Aristotle University of Thessaloniki), N. Zographos (Synopsys Switzerland LLC), and B. P. Colombeau (Applied Materials)
See more of: H02: High Purity and High Mobility Semiconductors 15
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>