Metals and Passivation

Thursday, 4 October 2018: 08:30-11:30
Universal 24 (Expo Center)
Chairs:
John D Murphy and Koichiro Saga
08:30
1185
(Invited) Metallic Contamination Issues in Advanced Semiconductor Processing
K. Saga (Sony Semiconductor Solutions Corporation)
09:00
1186
(Invited) Deep-Level Analysis of Passivation of Transition Metal Impurities in Silicon
J. Mullins, V. Markevich, S. Leonard, M. P. Halsall, and A. R. Peaker (University of Manchester)
 
1187
Hafnium Impurity Defects in Silicon: A Characterization (Cancelled)
09:50
Break
10:10
1188
(Invited) Ionic Surface Passivation to Extend the Performance of Crystalline Silicon
J. D. Murphy, A. I. Pointon, and N. E. Grant (University of Warwick)
10:40
1189
(Invited) Impact of High Temperature Processing on Copper-Related Light-Induced-Degradation in Silicon Devices
H. Savin (Aalto University)
11:10
1190
Electrically Active Defects in Plated Crystalline Silicon n+p Solar Cells: A DLTS Perspective
E. R. Simoen (Ghent Unviversity, Imec), C. Dang, R. Labie, and J. Poortmans (Imec)
See more of: H02: High Purity and High Mobility Semiconductors 15
See more of: Electronic and Photonic Devices and Systems
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