MRAM

Thursday, 4 October 2018: 10:40-12:40
Universal 7 (Expo Center)
Chairs:
Jin-Goo Park and Hitoshi Kubota
10:40
752
(Invited) Voltage-Controlled Magnetic Memory: Recent Progress and Opportunities
P. Khalili (Northwestern University)
11:20
753
(Invited) High Write Efficiency in Voltage-Control Spintronics Memory (VoCSM) for Saving Energy Consumption of Nonvolatile Memories
Y. Kato, H. Yoda, N. Shimomura, Y. Osawa, K. Koi, S. Oikawa, T. Inokuchi, M. Ishikawa, A. Tiwari, S. Shirotori, M. Shimizu, B. Altansargai, H. Sugiyama, and A. Kurobe (Toshiba Corporation)
12:00
754
Design of Perpendicular Magnetic-Tunneling-Junction Spin-Valve Including [Co/Pt]n Free Layer As Bulk Perpendicular Magnetic Anisotropy
J. U. Baek, K. Kondo, S. Jung, and J. G. Park (Hanyang University)
12:20
755
Design of Double Pinned Perpendicular Magnetic-Tunnel-Junction Spin-Valve Exhibiting Multiple Resistance States
J. Y. Choi (Hanyang University), K. Kondo (SUMCO CORPORATION, Hanyang University), J. U. Baek, T. H. Shim, and J. G. Park (Hanyang University)
See more of: D04: Nonvolatile Memories 6
See more of: Dielectric Science and Materials
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