G. Molas, G. Sassine, C. Nail, D. Alfaro Robayo, J. F. Nodin, C. Cagli, J. Coignus, P. Blaise, and E. Nowak (CEA, LETI, MINATEC Campus; Univ. Grenoble Alpes)

Y. Saito, K. V. Mitrofanov, K. Makino, N. Miyata, P. Fons, A. V. Kolobov, and J. Tominaga (AIST)

T. Kawashima (Nanyang Technological University, Toshiba Corporation Japan), K. S. Yew, Y. Zhou, D. S. Ang, H. Zhang (Nanyang Technological University), and K. Kyuno (Shibaura Institute of Technology)

D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), O. M. Orlov (JSC Molecular Electronics Research Institute), V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), and G. J. Krasnikov (JSC Molecular Electronics Research Institute)

T. V. Perevalov (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University), D. R. Islamov (Novosibirsk State University, Rzhanov Institute of Semiconductor Physics SB RAS), and V. A. Gritsenko (Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk State University)