Epitaxy 3

Thursday, 4 October 2018: 08:00-09:40
Universal 13 (Expo Center)
Chair:
Jean-Michel Hartmann
08:00
1075
(Invited) Epitaxy of (SiGe/Si) Superlattices for the Fabrication of Horizontal Gate-All-Around Nanosheet Transistors
N. J. Loubet, J. Li, R. Chao, C. Yeung (IBM Research), J. Frougier, C. Durfee (GLOBALFOUNDRIES), A. Arceo de la Pena, R. Muthinti, Z. Bi, M. Sankarapandian, W. Xu, Y. Mignot, S. Sieg, R. Conti, B. Veeraraghavan, H. Jagannathan, B. Haran, R. Divakaruni, and H. Bu (IBM Research)
08:30
1076
A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe
J. M. Hartmann, V. Mazzocchi, F. Pierre, and J. P. Barnes (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France)
08:50
1077
Atomistic and Optical Properties of Group IV Ultrathin Superlattices
S. Mukherjee (ECOLE POLYTECHNIQUE DE MONTREAL), M. Bauer (Applied Materials), A. Attiaoui, and O. Moutanabbir (École Polytechnique de Montréal)
09:10
1078
(Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs
M. Charles, J. Kanyandekwe, S. Bos, Y. Baines, E. Morvan, A. Torres, F. Templier, and M. Plissonnier (Univ. Grenoble Alpes, CEA, LETI)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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