Epitaxy 1

Tuesday, 2 October 2018: 14:00-15:40
Universal 13 (Expo Center)
Chair:
Jean-Michel Hartmann
14:00
1050
(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration
C. Porret, A. Y. Hikavyy (imec), J. F. Gomez Granados (imec, K.U. Leuven), S. Baudot (imec), A. Vohra (imec, K.U. Leuven), B. Kunert, B. Douhard, J. Bogdanowicz, M. Schaekers (imec), D. Kohen, J. Margetis, J. Tolle (ASM America), L. Lima (ASM Belgium), A. Sammak, G. Scappucci (TU Delft), E. Rosseel, R. Langer, and R. Loo (imec)
14:30
1051
Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB
V. Mazzocchi, J. M. Hartmann, M. Veillerot (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), J. B. Pin, and M. Bauer (Applied Materials Inc, Sunnyvale, California, 94085, USA)
 
1052
Trimethylgallium and Triethylgallium for Doping of Sige and Ge Epitaxial Layers (Cancelled)
15:10
1053
(Invited) Enabling Low Temperature and High Quality Epitaxial Films for Current and Future Nodes
M. Hemkar (Applied Materials Inc.), E. Sanchez, T. Mandrekar (Applied Materials), M. Chowdhury, Z. Zhu, C. Olsen, M. Vellaikal (Applied Materials Inc.), and S. Chu (Applied Materials)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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